The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Sep. 26, 2014
Intel Corporation, Santa Clara, CA (US);
Helia Naeimi, Santa Clara, CA (US);
Shih-Lien L. Lu, Portland, OR (US);
Shigeki Tomishima, Portland, OR (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
In one embodiment, a magnetoresistance random access memory (MRAM) such as a spin transfer torque (STT) random access memory (RAM), for example, has a subarray of bitcells and an electro-magnet positioned adjacent the subarray. A magnetic field is directed through a ferromagnetic device of bitcells of the first subarray to assist in the changing of states of bitcells of the subarray from a first state to a second state in which the ferromagnetic device of the bitcell is changed from one of parallel and anti-parallel polarization to the other of parallel and anti-parallel polarization. Accordingly, the content of the subarray may be readily preset or erased to one of the parallel or anti-parallel state with assistance from an electro-magnet. During a normal write operation, the bits to the other state are written. Other aspects are described herein.