The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Aug. 15, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Liang-Yao Lee, Taoyuan, TW;
Jyh-Kang Ting, Baoshan Township, TW;
Tsung-Chieh Tsai, Chu-Bei, TW;
Juing-Yi Wu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for ameliorating corner rounding effects in a photolithographic process is provided. A semiconductor workpiece having an active device region is provided, and a photoresist layer is formed over the semiconductor workpiece. A mask is provided for patterning for the photoresist layer, wherein the mask comprises pattern having a sharp corner associated with the active device region. The sharp corner is separated from the active device region by a first distance in a first direction and a second distance in a second direction, wherein the first distance meets a minimum criteria for the photolithographic process, and wherein the second distance is greater than the first distance. The photoresist layer is then exposed to a radiation source, and the radiation source patterns the photoresist layer through the mask, defining an exposure region on the semiconductor workpiece having a rounded corner associated with the sharp corner. Accordingly, the second distance generally prevents the rounded corner of the exposure region from overlapping the active device region.