The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Feb. 19, 2016
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Yoshitaka Kamochi, Haibara-gun, JP;

Ichiro Koyama, Haibara-gun, JP;

Yu Iwai, Haibara-gun, JP;

Atsushi Nakamura, Haibara-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); G03F 7/038 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/325 (2013.01);
Abstract

There is provided a laminate body which is capable of forming an excellent pattern on an organic semiconductor. A laminate body includes at least a water-soluble resin film and a resist film formed of a chemically amplified photosensitive resin composition on a surface of an organic semiconductor film in this order, in which the chemically amplified photosensitive resin composition contains a photoacid generator which is decomposed in an amount of 80% by mole or greater when exposed to light under the condition of 100 mJ/cmor greater at a wavelength of 365 nm, a mask pattern is formed by an exposed portion being hardly soluble in a developer containing an organic solvent, and the formed mask pattern is used as an etching mask.


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