The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 03, 2012
Applicant:
Ncc Nano, Llc, Dallas, TX (US);
Inventors:
Andrew E. Edd, Austin, TX (US);
Charles C. Munson, Dallas, TX (US);
Assignee:
NCC NANO, LLC, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); H05K 1/03 (2006.01); H05K 3/10 (2006.01); H05K 1/09 (2006.01); H05K 3/12 (2006.01); H05K 3/14 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0386 (2013.01); H05K 3/106 (2013.01); H05K 1/092 (2013.01); H05K 3/12 (2013.01); H05K 3/1275 (2013.01); H05K 3/14 (2013.01); H05K 2201/0116 (2013.01); H05K 2203/0143 (2013.01); H05K 2203/0278 (2013.01); H05K 2203/1157 (2013.01); H05K 2203/121 (2013.01); H05K 2203/125 (2013.01); H05K 2203/1338 (2013.01); H05K 2203/1492 (2013.01);
Abstract
A method for forming thin film conductors is disclosed. A thin film precursor material is initially deposited onto a porous substrate. The thin film precursor material is then irradiated with a light pulse in order to transform the thin film precursor material to a thin film such that the thin film is more electrically conductive than the thin film precursor material. Finally, compressive stress is applied to the thin film and the porous substrate to further increase the thin film's electrical conductivity.