The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jul. 08, 2016
International Business Machines Corporation, Armonk, NY (US);
Jin Cai, Cortlandt Manor, NY (US);
Effendi Leobandung, Stormville, NY (US);
Ning Li, White Plains, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Jean-Olivier Plouchart, New York, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate, a dielectric waveguide material stack including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT, an NPN BJT or a pair of complementary PNP BJT and NPN BJT, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench.