The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Aug. 12, 2016
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Shih-Yin Hsiao, Taibao, TW;
Ching-Chung Yang, Hsinchu, TW;
Ping-Hung Chiang, Hsinchu, TW;
Nien-Chung Li, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
Kuan-Liang Liu, Zhubei, TW;
Kai-Kuen Chang, Keelung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/745 (2006.01); H01L 29/76 (2006.01); H01L 23/58 (2006.01); H01L 21/00 (2006.01); H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 21/76895 (2013.01); H01L 29/0653 (2013.01); H01L 29/42364 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device having a substrate, a gate electrode, a source and a drain, and a buried gate dielectric layer is disclosed. The buried gate dielectric layer is disposed below said gate electrode and protrudes therefrom to said drain, thereby separating said gate electrode and said drain by a substantial distance to reduce gate induced drain leakage.