The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Oct. 20, 2016
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 29/66613 (2013.01); H01L 29/7824 (2013.01);
Abstract
A transistor structure including a substrate, a gate, a first dielectric layer, a first contact and a second contact is provided. The gate is disposed on the substrate. The first dielectric layer is disposed on the substrate. The first dielectric layer covers a portion of a top surface of the gate. The first contact is electrically connected to the gate. The second contact is disposed on the first dielectric layer. The second contact is electrically connected with the first contact.