The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 09, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Chueh-Yang Liu, Tainan, TW;
Yu-Ying Lin, Tainan, TW;
I-cheng Hu, Kaohsiung, TW;
Tien-I Wu, Taoyuan, TW;
Yu-Shu Lin, Pingtung County, TW;
Yu-Ren Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A manufacturing method of a semiconductor structure for improving quality of an epitaxial layer is provided in the present invention. The manufacturing method includes the following steps. A gate structure is formed on a semiconductor substrate, and two lightly doped regions are formed in the semiconductor substrate at two sides of the gate structure. A capping layer is formed on the gate structure and the lightly doped regions. Two epitaxial layers are formed at the two sides of the gate structure after the step of forming the capping layer. An oxide film formed on the lightly doped regions will influence the growth condition of the epitaxial layers. A removing process is performed to remove the oxide film on the lightly doped regions before the step of forming the capping layer so as to improve the quality of the epitaxial layers.