The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Nov. 09, 2015
Applicant:

Innolux Corporation, Jhu-Nan, Miao-Li County, TW;

Inventors:

Jung-Fang Chang, Jhu-Nan, TW;

I-Ho Shen, Jhu-Nan, TW;

Assignee:

INNOLUX CORPORATION, Jhu-Nan, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor (TFT) substrate includes a substrate and a TFT. The TFT is disposed on the substrate and comprises a gate, a gate dielectric layer, a film, a source and a drain. The gate is disposed on the substrate. The gate dielectric layer is disposed on the gate and the substrate. The film is disposed above the gate dielectric layer, and the source and the drain are disposed on the film and contacts with the film respectively. Wherein, there is an interval between the source and the drain, and the film corresponding to the interval has an arc concave portion. In addition, a display panel is also disclosed.


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