The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Jul. 12, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Jihong Chen, Cincinnati, OH (US);

Jiuan Wei, Springboro, OH (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 24/75 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/7555 (2013.01); H01L 2224/75265 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83895 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01);
Abstract

A method for bonding a first silicon part to a second silicon part includes arranging the first silicon part and the second silicon part in direct physical contact on a surface in a thermal insulating structure; controlling pressure in the thermal insulating structure to a predetermined pressure; controlling temperature in the thermal insulating structure to a predetermined temperature using one or more heaters; and bonding the first silicon part and the second silicon part during a process period. The predetermined temperature is in a temperature range that is greater than or equal to 1335° C. and less than 1414° C.


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