The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Sep. 16, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Frank Umbach, Munich, DE;

Niels Oeschler, Moehnesee, DE;

Kirill Trunov, Warstein, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/336 (2006.01); H01L 21/50 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 21/50 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/2908 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29116 (2013.01); H01L 2224/29118 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83385 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01322 (2013.01);
Abstract

A semiconductor chip includes a semiconductor body and a chip metallization applied on the semiconductor body. The chip metallization has an underside facing away from the semiconductor body. The chip further includes a layer stack applied to the underside of the chip metallization and having a number N≧1 or N≧2 of first partial layers and a number N≧2 of second partial layers. The first partial layers and the second partial layers are arranged alternately and successively such that at least one of the second partial layers is arranged between the first partial layers of each first pair of the first partial layers and such that at least one of the first partial layers is arranged between the second partial layers of each second pair of the second partial layers.


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