The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Mar. 10, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hsiang-Wei Lin, New Taipei, TW;

Chia-Ho Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28506 (2013.01); C23C 16/4558 (2013.01); C23C 16/45519 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/45591 (2013.01);
Abstract

The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a gas delivery ring with an outlet disposed under the gas import. A pressure near the outlet of the gas delivery ring is smaller than that of the rest of the vacuum chamber.


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