The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Feb. 12, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Dai-Wen Tang, Taipei, TW;

Hui Sun, Santa Clara, CA (US);

Chung Liu, Foster City, CA (US);

Benjamin Schwarz, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31122 (2013.01); H01L 21/32137 (2013.01); Y10S 438/947 (2013.01);
Abstract

Embodiments herein provide apparatus and methods for performing an etching process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has having a first group of openings defined therebetween and etching the spacer layer disposed on the substrate while forming an oxidation layer on the spacer layer.


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