The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Oct. 02, 2012
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Atsushi Iwasaki, Echizen, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
According to the present invention, there is provided a method for manufacturing single crystal based on a Czochralski method, including: analyzing Ni concentration in at least one of graphite components used in a furnace in which the single crystal is manufactured; and manufacturing the single crystal using the at least one of the graphite components when the analyzed Ni concentration is 30 ppb or less. As a result, in manufacture of the single crystal based on the Czochralski method, the method that enables manufacturing high-quality single crystal in which a reduction in LT (Life Time) or an LPD (Light Point Defect) abnormality does not occur can be provided.