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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9735331 B1

PDFFull Text
Date of Patent:
Aug. 15, 2017

Filed:

Aug. 16, 2016

Bonding wire for semiconductor package and semiconductor package including same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Soo Moon Park, Seoul, KR;

Il Woo Park, Suwon-si, KR;

Mi Hwa Yu, Suwon-si, KR;

Chang Bun Yoon, Gwangmyeong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Roy Potter

Assistant Examiner:

Paul Patton

Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/54 (2010.01); H01L 33/50 (2010.01); H01L 25/075 (2006.01); H05B 37/02 (2006.01); F21V 8/00 (2006.01); F21V 23/02 (2006.01); F21V 19/00 (2006.01); F21V 29/77 (2015.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); F21V 19/006 (2013.01); F21V 23/02 (2013.01); F21V 29/77 (2015.01); G02B 6/0031 (2013.01); G02B 6/0083 (2013.01); H01L 24/45 (2013.01); H01L 25/0753 (2013.01); H01L 33/06 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/502 (2013.01); H01L 33/54 (2013.01); H05B 37/0272 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45644 (2013.01); H01L 2924/12041 (2013.01);
Abstract

Provided is a bonding wire for a semiconductor package and a semiconductor package including the same. The bonding wire for the semiconductor package may include a core portion including silver (Ag), and a shell layer surrounding the core portion, having a thickness of 2 nm to 23 nm, and including gold (Au). The semiconductor package may include a package body having a first electrode structure and a second electrode structure, a semiconductor light emitting device comprising a first electrode portion and a second electrode portion electrically connected to the first electrode structure and the second electrode structure, and a bonding wire connecting at least one of the first electrode structure and the second electrode structure to the semiconductor light emitting device.

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