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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9735315 B1

PDFFull Text
Date of Patent:
Aug. 15, 2017

Filed:

Sep. 15, 2016

Semiconductor heterostructure with stress management

Applicant:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Inventors:

Daniel Billingsley, Austin, TX (US);

Robert M. Kennedy, Columbia, SC (US);

Wenhong Sun, Columbia, SC (US);

Rakesh Jain, Columbia, SC (US);

Maxim S. Shatalov, Columbia, SC (US);

Alexander Dobrinsky, Loudonville, NY (US);

Michael Shur, Latham, NY (US);

Remigijus Gaska, Columbia, SC (US);

Assignee:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Attorney:

LaBatt, LLC

Primary Examiner:

Douglas Menz

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 29/15 (2006.01); H01L 29/20 (2006.01); H01L 33/20 (2010.01); H01L 33/24 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 29/155 (2013.01); H01L 29/2003 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 2224/16225 (2013.01);
Abstract

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

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