The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jan. 28, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure at least partially in a semiconductor substrate. The semiconductor device structure also includes a channel structure over the semiconductor substrate. The source structure is partially covered by the channel structure. The semiconductor device structure further includes a drain structure covering the channel structure. The drain structure and the source structure have different conductivity types. A portion of the channel structure is sandwiched between the source structure and the drain structure. In addition, the semiconductor device structure includes a gate stack partially covering the channel structure.