The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Nov. 18, 2013
General Electric Company, Schenectady, NY (US);
Stephen Daley Arthur, Niskayuna, NY (US);
Kevin Sean Matocha, Starkville, MS (US);
Ramakrishna Rao, Niskayuna, NY (US);
Peter Almern Losee, Starkville, MS (US);
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
An insulated gate field-effect transistor (IGFET) device includes a semiconductor body () and a gate oxide (). The semiconductor body includes a first well region () doped with a first type of dopant and a second well region () that is doped with an opposite, second type of dopant and is located within the first well region. The gate oxide includes a relatively thinner outer section () and a relatively thicker interior section (). The outer section is disposed over the first well region and the second well region. The interior section is disposed over a junction gate field effect transistor region () of the semiconductor body doped with the second type of dopant. A conductive channel is formed through the second well region when a gate signal is applied to a gate contact () disposed on the gate oxide.