logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9735235 B1

PDFFull Text
Date of Patent:
Aug. 15, 2017

Filed:

Jul. 21, 2016

Nanowire and method of fabricating the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Tsai-Yu Wen, Tainan, TW;

Chin-Sheng Yang, Hsinchu, TW;

Chun-Jen Chen, Tainan, TW;

Tsuo-Wen Lu, Kaohsiung, TW;

Yu-Ren Wang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 29/161 (2006.01); H01L 21/316 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/02164 (2013.01); H01L 21/02233 (2013.01); H01L 21/02236 (2013.01); H01L 21/02381 (2013.01); H01L 21/02452 (2013.01); H01L 21/02532 (2013.01); H01L 21/02535 (2013.01); H01L 21/02603 (2013.01); H01L 21/02612 (2013.01); H01L 21/02639 (2013.01); H01L 21/02664 (2013.01); H01L 21/30604 (2013.01); H01L 21/31658 (2013.01); H01L 29/161 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01);
Abstract

A method of forming a nanowire includes providing a substrate. The substrate is etched to form at least one fin. Subsequently, a first epitaxial layer is formed on an upper portion of the fin. Later, an undercut is formed on a middle portion the fin. A second epitaxial layer is formed to fill into the undercut. Finally, the fin, the first epitaxial layer and the second epitaxial layer are oxidized to condense the first epitaxial layer and the second epitaxial layer into a germanium-containing nanowire.

Find Patent Forward Citations

Wen, Tsai-Yu. (2017). Nanowire and method of fabricating the same (U.S. Patent No. 9735235). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9735235

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…