The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Mar. 18, 2015
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Lulu Peng, Singapore, SG;

Donald Ray Disney, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01F 27/28 (2006.01); H01F 1/14 (2006.01); H01F 27/24 (2006.01); H01L 23/522 (2006.01); H01F 1/147 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01F 1/14708 (2013.01); H01F 27/24 (2013.01); H01F 27/2804 (2013.01); H01L 28/10 (2013.01); H01F 2027/2809 (2013.01);
Abstract

Devices and methods of forming a device are disclosed. The method includes providing a wafer that includes a center insulator layer sandwiched by a top substrate and a bottom substrate. Both sides of the wafer are patterned and etched in sequence to form deep trenches in both substrates. A conductive seed layer is formed on both sides of the wafer in sequence to cover all exposed areas. Both sides of the wafer are electroplated simultaneously to fill both deep trenches with a conductive material. Both sides of the wafer are polished in sequence to form a coplanar surface. A protective layer is deposited on both sides of the wafer in sequence. Selective portions of the protective layer on both sides are patterned and etched in sequence to expose micro bump bonding areas. Micro bumps are formed on both sides of the wafer in sequence to facilitate electrical connection.


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