The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Sep. 30, 2016
Applicant:
Ams Ag, Unterpremstaetten, AT;
Inventors:
Assignee:
AMS AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/552 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 23/552 (2013.01); H01L 25/0657 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/10125 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/136 (2013.01); H01L 2224/1319 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13027 (2013.01); H01L 2224/13028 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13561 (2013.01); H01L 2224/1613 (2013.01); H01L 2224/16106 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/30101 (2013.01);
Abstract
The semiconductor device comprises a semiconductor substrate () with a metallization () having an upper terminal layer () located at a front side () of the substrate. The metallization forms a through-substrate via () from the upper terminal layer to a rear terminal layer () located opposite to the front side at a rear side () of the substrate. The through-substrate via comprises an annular cavity () and a void (), which may be filled with air or another gas. A solder ball () closes the void without completely filling it. A variety of interconnections for three-dimensional integration is offered by this scheme.