The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Oct. 02, 2015
Ju-il Choi, Seongnam-si, KR;
Atsushi Fujisaki, Seongnam-si, KR;
Byung-iyul Park, Seoul, KR;
Ji-soon Park, Suwon-si, KR;
Joo-hee Jang, Hwaseong-si, KR;
Jeong-gi Jin, Seoul, KR;
Ju-il Choi, Seongnam-si, KR;
Atsushi Fujisaki, Seongnam-si, KR;
Byung-Iyul Park, Seoul, KR;
Ji-soon Park, Suwon-si, KR;
Joo-hee Jang, Hwaseong-si, KR;
Jeong-gi Jin, Seoul, KR;
Abstract
An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.