The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jan. 30, 2017
Applicant:
Napra Co., Ltd., Katsushika-ku, Tokyo, JP;
Inventor:
Shigenobu Sekine, Tokyo, JP;
Assignee:
Napra Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/28 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/10 (2006.01); H01L 23/04 (2006.01); H01L 23/367 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/10 (2013.01); H01L 23/04 (2013.01); H01L 23/3675 (2013.01); H01L 23/535 (2013.01); H01L 23/28 (2013.01); H01L 23/29 (2013.01); H01L 23/295 (2013.01); H01L 23/298 (2013.01); H01L 23/3107 (2013.01); H01L 23/3114 (2013.01); H01L 23/3142 (2013.01);
Abstract
Disclosed is a semiconductor device that is configured to contain a sealing layer for sealing a semiconductor element supported on a base, the sealing layer being configured to have a nanocomposite structure that comprises a large number of nanometer-sized (1 μm or smaller) insulating nanoparticles composed of SiO, and an amorphous silica matrix that fills up the space around the insulating nanoparticles without voids and gaps.