The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Feb. 04, 2016
Hitachi Kokusai Electric Inc., Tokyo, JP;
Naofumi Ohashi, Toyama, JP;
Masanori Nakayama, Toyama, JP;
Atsuhiko Suda, Toyama, JP;
Kazuyuki Toyoda, Toyama, JP;
Shun Matsui, Toyama, JP;
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes receiving film thickness distribution data of a polished first insulating film of a substrate; calculating processing data for reducing a difference between a film thickness at a center side of the substrate and a film thickness at a periphery side of the substrate, based on the film thickness distribution data; loading the substrate into a process chamber; supplying a process gas to the substrate; and correcting a film thickness of the first insulating film based on the processing data by activating the process gas so that a concentration of active species of the process gas generated at the center side of the substrate differs from a concentration of active species of the process gas generated at the periphery side of the substrate.