The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2017

Filed:

Jul. 29, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ming Lei, Ballston Lake, NY (US);

Byoung-Gi Min, Cohoes, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/00 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2817 (2013.01);
Abstract

A method and apparatus for detecting VC defects and determining the exact shorting locations based on charging dynamics induced by scan direction variation are provided. Embodiments include providing a substrate having at least a partially formed device thereon, the partially formed device having at least a word-line, a share contact, and a bit-line; performing a first EBI on the at least partially formed device in a single direction; classifying defects by ADC based on the first EBI inspection; selecting DOI among the classified defects for further review; performing a second EBI on the DOI in a first, second, third, and fourth direction; comparing a result of the first direction against a result of the second direction and/or a result of the third direction against a result of the fourth direction; and determining a shorting location for each DOI based on the one or more comparisons.


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