The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Nov. 14, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Effendi Leobandung, Stormville, NY (US);
Ning Li, White Plains, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Jean-Oliver Plouchart, New York, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/40 (2010.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0062 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/40 (2013.01); H01S 5/0425 (2013.01); H01S 5/1039 (2013.01); H01S 5/1042 (2013.01); H01S 5/22 (2013.01); H01S 5/343 (2013.01); H01L 33/44 (2013.01);
Abstract
An optoelectronic light emission device is provided that includes a gain region of at least one type III-V semiconductor layer that is present on a lattice mismatched semiconductor substrate. The gain region of the type III-V semiconductor layer has a nanoscale area using nano-cavities. The optoelectronic light emission device is free of defects.