The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Oct. 26, 2012
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Carl P. Taussig, Palo Alto, CA (US);

Han-Jun Kim, Palo Alto, CA (US);

Ohseung Kwon, Palo Alto, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 21/027 (2013.01); H01L 21/0337 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1255 (2013.01);
Abstract

A method of combinatorial masking employs a combinatorial etch mask that includes a top layer of a stack of material layers and a secondary mask on the top layer to etch other material layers of the stack. The method includes patterning a first layer at a top of the stack of material layers, and providing the secondary mask on top of the patterned first layer. The method further includes etching other material layers of the stack including a second layer below the first layer with the combinatorial mask and then etching the first layer along with the other material layers of the stack excluding the second layer using the secondary mask as an etch mask.


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