The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Oct. 07, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Hong He, Schenectady, NY (US);
Chiahsun Tseng, Wynantskill, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
Yunpeng Yin, Niskayuna, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/3085 (2013.01); H01L 21/3088 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/16 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method of forming a fin-based field-effect transistor device includes forming one or more first fins comprising silicon on a substrate, forming epitaxial layers on sides of the one or more first fins, and removing the one or more first fins to form a plurality of second fins.