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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9728533 B1

PDFFull Text
Date of Patent:
Aug. 08, 2017

Filed:

Dec. 22, 2014

Aqueous cleaning techniques and compositions for use in semiconductor device manufacture

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chun-Li Chou, Jhubei, TW;

Shao-Yen Ku, Jhubei, TW;

Pei-Hung Chen, Hsinchu, TW;

Jui-Ping Chuang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Chuong A Luu

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/088 (2006.01); C11D 7/32 (2006.01); C11D 7/34 (2006.01); C11D 11/00 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); C11D 7/3209 (2013.01); C11D 7/3281 (2013.01); C11D 7/34 (2013.01); C11D 11/0047 (2013.01); H01L 21/02063 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/6659 (2013.01); H01L 29/7842 (2013.01); H01L 29/165 (2013.01); H01L 29/66583 (2013.01); H01L 29/66636 (2013.01); H01L 29/7833 (2013.01); H01L 29/7848 (2013.01);
Abstract

Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.

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