The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Apr. 01, 2014
Applicant:
Roden R. Topacio, Markham, CA;
Inventor:
Roden R. Topacio, Markham, CA;
Assignee:
ATI Technologies ULC, Markham, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/31144 (2013.01); H01L 21/78 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/119 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/94 (2013.01); H01L 2924/12042 (2013.01);
Abstract
Various semiconductor workpiece polymer layers and methods of fabricating the same are disclosed. In one aspect, a method of manufacturing is provided that includes applying a polymer layer to a passivation structure of a semiconductor workpiece where the semiconductor workpiece has first and second semiconductor chips separated by a dicing street. A first opening is patterned in the polymer layer with opposing edges pulled back from the dicing street. A mask is applied over the first opening. A first portion of the passivation structure is etched while using the polymer layer as an etch mask.