The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Aug. 22, 2016
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
The present invention provides a semiconductor structure, includes a substrate, a dielectric layer disposed on the substrate, a first gate structure and a second gate structure disposed in the dielectric layer, a hard mask disposed in the dielectric layer, where the hard mask covers a sidewall of the first gate structure, and covers the second gate structure, and a contact structure disposed in the dielectric layer. The contact structure at least crosses over the hard mask. The contact structure includes a first contact portion and a second contact portion. The first contact portion contacts the first gate structure directly, the second contact portion contacts the substrate directly, and the hard mask is disposed between the first contact portion and the second contact portion.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile