The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Mar. 30, 2012
Applicants:
Veli Matti Airaksinen, Espoo, FI;
Jari Makinen, Espoo, FI;
Inventors:
Veli Matti Airaksinen, Espoo, FI;
Jari Makinen, Espoo, FI;
Assignee:
OKMETIC OYJ, Vantaa, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); C23C 16/04 (2006.01); C23C 16/24 (2006.01); H01L 21/285 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); C23C 16/045 (2013.01); C23C 16/24 (2013.01); H01L 21/28556 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for depositing one or more polycrystalline silicon layers () on a substrate () by a chemical vapor deposition in a reactor, includes adjusting a deposition temperature between 605° C.-800° C. in a process chamber of the reactor, and depositing the one or more polycrystalline silicon layers on the substrate by using a silicon source gas including SiH4 or SiH2Cl2, and a dopant gas including BCl3.