The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Mar. 12, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Heng Pan, Santa Clara, CA (US);

Matthew Scott Rogers, Mountain View, CA (US);

Christopher S. Olsen, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01J 37/32357 (2013.01); H01J 37/32724 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01);
Abstract

Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.


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