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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9728397 B1

PDFFull Text
Date of Patent:
Aug. 08, 2017

Filed:

May. 10, 2016

Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Hsu Ting, Tainan, TW;

Chun-Wei Yu, Tainan, TW;

Chueh-Yang Liu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Hoai V Pham

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); H01L 21/31116 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0657 (2013.01);
Abstract

A semiconductor device and a method of forming the same, the semiconductor device includes fin shaped structures and a recessed insulating layer. The fin shaped structures are disposed on a substrate. The recessed insulating layer covers a bottom portion of each of the fin shaped structures to expose a top portion of each of the fin shaped structures. The recessed insulating layer has a curve surface and a wicking structure is defined between a peak and a bottom of the curve surface. The wicking structure is disposed between the fin shaped structures and has a height being about 1/12 to 1/10 of a height of the top portion of the fin shaped structures.

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