The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
May. 20, 2015
Applicant:
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Inventors:
Tomonori Takahashi, Haibara-gun, JP;
Kazutaka Takahashi, Haibara-gun, JP;
Atsushi Mizutani, Haibara-gun, JP;
Hiroyuki Seki, Haibara-gun, JP;
Hideo Fushimi, Haibara-gun, JP;
Tomoo Kato, Haibara-gun, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/42 (2006.01); C11D 7/08 (2006.01); C11D 7/50 (2006.01); C11D 11/00 (2006.01); C09K 13/00 (2006.01); C09K 13/06 (2006.01); C11D 7/26 (2006.01); C11D 7/32 (2006.01); C11D 7/34 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
G03F 7/425 (2013.01); C09K 13/00 (2013.01); C09K 13/06 (2013.01); C11D 7/08 (2013.01); C11D 7/265 (2013.01); C11D 7/3209 (2013.01); C11D 7/3245 (2013.01); C11D 7/34 (2013.01); C11D 7/5013 (2013.01); C11D 11/0047 (2013.01); G03F 7/422 (2013.01); G03F 7/423 (2013.01); H01L 21/02052 (2013.01); H01L 21/02057 (2013.01); H01L 21/02063 (2013.01); H01L 21/02068 (2013.01); H01L 21/02071 (2013.01); H01L 21/31133 (2013.01); H01L 21/32134 (2013.01); H01L 21/32136 (2013.01); H01L 21/32138 (2013.01); H01L 21/32139 (2013.01);
Abstract
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.