The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Mar. 09, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Choong Han Ryu, Chungcheongbuk-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 7/20 (2006.01); G03F 1/78 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/78 (2013.01); G03F 7/2063 (2013.01); G03F 7/2065 (2013.01);
Abstract
A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.