The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jan. 27, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chun-Wen Cheng, Hsinchu County, TW;

Jiou-Kang Lee, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0051 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2207/07 (2013.01);
Abstract

A device includes a substrate, a first structure, a second structure, a third structure and a bumper. The first structure is over the substrate. The second structure is over the substrate, wherein the second structure has a first end coupled to the first structure. The third structure is over the substrate, wherein the third structure is coupled to a second end of the second structure. The bumper is between the substrate and the third structure, wherein the bumper is a multi-layered bumper including a first conductive feature, a dielectric feature and a second conductive feature. The dielectric feature is over the first conductive feature. The second conductive feature is over the dielectric feature and electrically connected to the first conductive feature.


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