The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Feb. 09, 2015
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Nicholas P T Bateman, Reading, MA (US);

Benjamin Riordan, Newburyport, MA (US);

William T. Weaver, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01J 2237/31711 (2013.01);
Abstract

A method of processing a solar cell is disclosed, where a chained patterned ion implant is performed to create a workpiece having a lightly doped surface having more heavily doped regions. This configuration may be used in various embodiments, such as for selective emitter solar cells. Additionally, various mask sets that can be used to create this desired pattern are also disclosed. The mask set may include one or more masks that have an open portion and a patterned portion, where the union of the open portions of the masks comprises the entirety of the surface to be implanted. The patterned portions of the masks combine to create the desired pattern of heavily doped regions.


Find Patent Forward Citations

Loading…