The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Jun. 07, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Ming-Shiou Hsieh, Chiayi County, TW;
Chun-Yao Yang, Kaohsiung, TW;
Shi-You Liu, Kaohsiung, TW;
Rong-Sin Lin, Taichung, TW;
Han-Ting Yen, Yunlin County, TW;
Yi-Wei Chen, Taichung, TW;
I-Cheng Hu, Kaohsiung, TW;
Yu-Shu Lin, Pingtung County, TW;
Neng-Hui Yang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.