The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Jun. 28, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chien-Ming Lai, Tainan, TW;
Chien-Chung Huang, Tainan, TW;
Yu-Ting Tseng, Tainan, TW;
Ya-Huei Tsai, Tainan, TW;
Yu-Ping Wang, Taoyuan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823437 (2013.01); H01L 21/283 (2013.01); H01L 21/28088 (2013.01); H01L 21/3211 (2013.01); H01L 21/32139 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/7843 (2013.01);
Abstract
The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.