The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Oct. 29, 2015
Applicant:
Nikon Corporation, Tokyo, JP;
Inventors:
Tsukasa Kishiume, Kawasaki, JP;
Koichiro Iwahori, Fuchu, JP;
Assignee:
NIKON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/32 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0676 (2013.01); C23C 14/0641 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/325 (2013.01); C23C 14/34 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02483 (2013.01); H01L 21/02491 (2013.01); H01L 21/02507 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01);
Abstract
An amount of nitrogen in a compound film is controlled. A method of manufacturing compound film comprising forming films laminated on a substrate placed at a film forming chamber is provided. According to the method of manufacturing compound film, a first compound layer including one or more elements selected from metal elements and semimetal elements and oxygen element and a second compound layer including one or more elements and nitrogen element are laminated alternately. The first compound layer is formed by a Filtered Arc Ion Plating method and the second compound layer is formed by a sputtering method.