The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Apr. 21, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Tsung-Hsing Yu, Taipei, TW;
Chia-Wen Liu, Taipei, TW;
Yeh Hsu, Guishan Township, TW;
Ken-Ichi Goto, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
A semiconductor device and method of forming the same are described. A semiconductor device includes an active area adjacent a channel in a semiconductor composite. The active area includes a first active area layer having a first dopant concentration, a second active area layer having a second dopant concentration over the first active area layer, and a third active area layer having a third dopant concentration, over the second active area. The third dopant concentration is greater than the second dopant concentration, and the second dopant concentration is greater than the first dopant concentration. The channel includes a second channel layer comprising carbon over a first channel layer and a third channel layer over the second channel layer. The active area configuration improves drive current and reduces contact resistance, and the channel configuration increases short channel control, as compared to a semiconductor device without the active area and channel configuration.