The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jun. 21, 2016
United Microelectronics Corporation, Hsinchu, TW;
Yu-Ying Lin, Tainan, TW;
Kuan Hsuan Ku, Tainan, TW;
I-Cheng Hu, Kaohsiung, TW;
Chueh-Yang Liu, Tainan, TW;
Shui-Yen Lu, Tainan, TW;
Yu Shu Lin, Pingtung, TW;
Chun Yao Yang, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Neng-Hui Yang, Hsinchu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure. A laterally extending portion of the epitaxial structure extends laterally at an area below the top surface of the semiconductor substrate in a direction toward an area below the gate structure and beyond an area where the epitaxial structure extends vertically. The device further includes an interlayer dielectric layer between a side surface of the vertically extending portion of the epitaxial structure and a side surface of the gate structure. A top surface of the laterally extending portion of the epitaxial structure directly contacts the interlayer dielectric layer.