The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jun. 02, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Kuan-Chuan Chen, Taichung, TW;
Chih-Chung Wang, Hsinchu, TW;
Wen-Fang Lee, Hsinchu, TW;
Nien-Chung Li, Hsinchu, TW;
Shih-Yin Hsiao, Chiayi County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a high voltage transistor is provided. First, a substrate having a top surface is provided, following by forming a thermal oxide layer on the substrate. At least a part of the thermal oxidation layer is removed to form a recess in the substrate, wherein a bottom surface of the recess is lower than the top surface of the substrate. A gate oxide layer is formed in the recess, then a gate structure is formed on the gate oxide layer. The method further includes forming a source/drain region in the substrate.