The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Sep. 07, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Chung-Yu Huang, Tainan, TW;
Tien-Hao Tang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An electrostatic discharge protection semiconductor device includes a substrate, a first well formed in the substrate, a second well formed in the substrate and spaced apart from the first well, a gate formed on the substrate and positioned in between the first well and the second well, a drain region formed in the first well, a source region formed in the second well, a first doped region formed in the first well and adjacent to the drain region, and a second doped region formed in the first well and spaced apart from both the first doped region and the gate. The first well, the drain region, and the source region include a first conductivity type, the second well, the first doped region and the second doped region include a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other.