The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Jul. 28, 2015
Applicant:

Amkor Technology, Inc., Tempe, AZ (US);

Inventors:

Ji Yeon Ryu, Seoul, KR;

Byong Jin Kim, Gyeonggi-do, KR;

Jae Beum Shim, Incheon, KR;

Assignee:

Amkor Technology, Inc., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/3171 (2013.01); H01L 23/3114 (2013.01); H01L 23/3192 (2013.01); H01L 24/13 (2013.01); H01L 2224/02351 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13082 (2013.01);
Abstract

A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.


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