The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9716066 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 25, 2017

Filed:

Jun. 29, 2013
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kevin J. Lee, Beaverton, OR (US);

James Y. Jeong, Beaverton, OR (US);

Hsiao-Kang Chang, Hillsboro, OR (US);

John Muirhead, Portland, OR (US);

Adwait Telang, Beaverton, OR (US);

Puneesh Puri, Aloha, OR (US);

Jiho Kang, Beaverton, OR (US);

Nitin M. Patel, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/6835 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/564 (2013.01); H01L 24/02 (2013.01); H01L 24/13 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03424 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03823 (2013.01); H01L 2224/03825 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/116 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/11823 (2013.01); H01L 2224/11825 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13562 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13583 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13616 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/13657 (2013.01); H01L 2224/13664 (2013.01); H01L 2224/16145 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A 3D interconnect structure and method of manufacture are described in which metal redistribution layers (RDLs) are integrated with through-silicon vias (TSVs) and using a 'plate through resist' type process flow. A silicon nitride or silicon carbide passivation layer may be provided between the thinned device wafer back side and the RDLs to provide a hermetic barrier and polish stop layer during the process flow.


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