The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Dec. 03, 2015
Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Tac Keun Oh, Seoul, KR;

Seung Taek Yang, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/92144 (2013.01); H01L 2224/97 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/18162 (2013.01);
Abstract

A semiconductor package may include a semiconductor die mounted on a first surface of an interposer die so that a die connection portion of the semiconductor die faces to the first surface of the interposer die, a protection portion may be disposed on the first surface of the interposer die to cover the semiconductor die, and an interconnection structure disposed in and on the interposer die. The interconnection structure may include an external connection portion that is located on a second surface of the interposer die opposite to the semiconductor die, a through electrode portion that penetrates the interposer die to have an end portion combined with the die connection portion, and an extension portion that connects the through electrode portion to the external connection portion. Related methods are also provided.


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