The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Apr. 10, 2015
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A method for manufacturing a semiconductor device, includes: (a) providing a SiC epitaxial substrate in which on a SiC support substrate, a SiC epitaxial growth layer having an impurity concentration equal to or less than 1/10,000 of that of the SiC support substrate and having a thickness of 50 μm or more is disposed; (b) forming an impurity region, which forms a semiconductor element, on a first main surface of the SiC epitaxial substrate by selectively injecting impurity ions; (c) forming an ion implantation region, which controls warpage of the SiC epitaxial substrate, on a second main surface of the SiC epitaxial substrate by injecting predetermined ions; and (d) heating the SiC epitaxial substrate after (b) and (c).