The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Jun. 09, 2015
National Sun Yat-sen University, Kaohsiung, TW;
Ting-Chang Chang, Kaohsiung, TW;
Kuan-Chang Chang, Kaohsiung, TW;
Tsung-Ming Tsai, Kaohsiung, TW;
Tian-Jian Chu, Kaohsiung, TW;
Chih-Hung Pan, Kaohsiung, TW;
National Sun Yat-Sen University, Kaohsiung, TW;
Abstract
A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.